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S T S 2300S
S amHop Microelectronics C orp. S ep. 8 2005
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
6A
R DS (ON)
S uper high dense cell design for low R DS (ON). R ugged and reliable. S OT-23 package.
35 @ V G S = 4.5V 45 @ V G S = 2.5V
D
S OT-23
D S G
G
S
AB S OL UTE MAXIMUM R ATING (TA=25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent Maximum P ower Dissipation
a
S ymbol VDS VGS ID IDM IS PD TJ, TS TG
Limit 20 12 6 20 1.25 1.25 -55 to 150
Unit V V A A A W C
Operating Junction and S torage Temperature R ange
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W
1
S T S 2300S
E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS
b
S ymbol
Condition
VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 10V, VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5V, ID = 4A VGS = 2.5V, ID= 2A VDS = 5V, VGS = 4.5V VDS = 5V, ID =4A
Min Typ C Max Unit
20 1 100 0.5 0.8 30 38 18.1 803 120 85 1.3 35 45 V uA nA V
m-ohm m-ohm
ON CHAR ACTE R IS TICS
Gate Threshold Voltage
VGS(th) R DS (ON) ID(ON) gFS
c
Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance
6
A S
PF PF PF
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance Output Capacitance R everse Transfer Capacitance
CISS COSS CRSS
c
VDS =15V, VGS = 0V f =1.0MHZ
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge
tD(ON) tr tD(OFF) tf Qg Qgs Qgd
VDD = 10V, ID = 1A, VGS = 4.5V, R GE N = 6 ohm
15 18 78 27 8.8
ns ns ns ns nC nC nC
VDS =10V, ID = 4A, VGS =4.5V
1.8 3.9
2
S T S 2300S
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
VSD
Condition
VGS = 0V, Is = 1.25A
Min Typ Max Unit
0.8 1.2 V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b
Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing.
12.5 V G S =10V V G S =2.5V
V G S =4.5V
15
10
12
ID, Drain C urrent(A)
7.5 V G S =2V
ID, Drain C urrent (A)
9 6 -55 C 3 0 T j=125 C 0 0.5 1.0 1.5 25 C 2.0 2.5 3.0
5.0 2.5
V G S =1.5V
0
0
0.5
1
1.5
2
2.5
3
V DS , Drain-to-S ource Voltage (V )
V G S , G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
45 40 V G S =2.5V 1.6
F igure 2. Trans fer C haracteris tics
R DS (ON), On-R es is tance Normalized
1.4 1.2 1.0 0.8 0.6 0.4 25
V G S =4.5V ID=4A
R DS (on) (m W)
35 30 25 20 0 V G S =4.5V
V G S =2.5V ID=2A
0
2.5
5.0
7.5
10
12.5
50
75
100
125
150
T j( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage
F igure 4. On-R es is tance Variation with Drain C urrent and Temperature
3
S T S 2300S
B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
6
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 5. G ate T hres hold V ariation with T emperature
80
F igure 6. B reakdown V oltage V ariation with T emperature
20.0
25 C
ID=4A
Is , S ource-drain current (A)
70
10.0 5.0
R DS (on) (m W)
60 50 40 30 25 C 0 0 2 4 6 8 10 125 C 75 C
125 C
1.0 0 0.4
75 C
0.8
1.2
1.6
2.0
V G S , G ate-S ource Voltage (V )
V S D, B ody Diode F orward V oltage (V )
F igure 7. On-R es is tance vs . G ate-S ource V oltage
F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent
4
S T S 2300S
1200
V G S , G ate to S ource V oltage (V )
4.5 3.6 2.7 1.8 0.9 0 VDS =10V ID=4A
1000
C , C apacitance (pF )
C is s 800 600 400 200 C rs s 0 0 5 10 15 20 25 30 C os s
6
0
2
4
6
8
10
12
14 16
V DS , Drain-to S ource Voltage (V )
Qg, T otal G ate C harge (nC )
F igure 9. C apacitance
F igure 10. G ate C harge
600
Tr
80
ID, Drain C urrent (A)
S witching T ime (ns )
100 60 10
T D(off) Tf
10
R
DS
(O N
)L
im i
t
10
ms
10
1s
DC
0m
T D(on)
1
s
1 1
V DS =10V ,ID=1A V G S =4.5V
0.1 0.03
VGS =4.5V S ingle P ulse T A=25 C 0.1 1 10 30 50
6 10
60 100 300 600
V DS =10V ,ID=1A V G S =4.5V
R g, G ate R es is tance (W)
V DS , Drain-S ource V oltage (V )
F igure 11.s witching characteris tics
F igure 12. Maximum S afe O perating Area
5
S T S 2300S
V DD ton toff tr
90%
5
VG S R GE N
V IN D G
RL V OUT
td(on) V OUT
td(off)
90% 10%
tf
10%
INVE R TE D
90%
S
V IN
50% 10%
50%
P ULS E WIDTH
F igure 11. S witching T es t C ircuit
10
F igure 12. S witching Waveforms
Normalized Transient
Thermal Resistance
1
0.5 0.2
P DM t1
on
0.1
0.1 0.05 0.02 1. 2. 3. 4.
t2
0.01 0.00001
0.01
Single Pulse 0.0001 0.001 0.01 0.1 1 10
R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
6
S T S 2300S
A
L G F M
J
B
C
I
H
E
D (TYP .)
2.70 2.40 1.40 0.35 0
3.10 2.80 1.60 0.50 0.10 0.55 1.30 0.20 1.15 10X
0.106 0.094 0.055 0.014 0
0.122 0.110 0.063 0.020 0.004
F
G
0.45 1.90 REF. 1.00 0.10 0.40 0.45 0X
0.022 0.018 0.075 REF. 0.039 0.004 0.016 0.033 0X 0.051 0.008 0.045 10X
I J L M
7
S T S 2300S
SOT-23 Tape and Reel Data
SOT-23 Carrier Tape
UNIT:P PACKAGE
SOT-23
A0 3.20 O0.10
B0 3.00 O0.10
K0
D0
D1 i1.50 +0.10
E
8.00 +0.30 -0.10
E1 1.75 O0.10
E2 3.50 O0.05
P0 4.00 O0.10
P1 4.00 O0.10
P2 2.00 O0.05
T 0.20 O0.02
i1.00 1.33 O0.10 +0.25
SOT-23 Reel
UNIT:P TAPE SIZE 8P REEL SIZE i178 M i178 O1 N i60 O1 W 9.00 O0.5 W1 12.00 O0.5 H i13.5 O0.5 K 10.5 S G R 5.00 V 18.00
2.00 i10.0 O0.5
8

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